dc.contributor.author | del Alamo, Jesus A. | en_US |
dc.contributor.author | Bahl, Sandeep R. | en_US |
dc.contributor.author | Azzam, Walid | en_US |
dc.contributor.author | Odoardi, Angela R. | en_US |
dc.date.accessioned | 2010-07-16T04:06:48Z | |
dc.date.available | 2010-07-16T04:06:48Z | |
dc.date.issued | 1989-01-01 to 1989-12-31 | en_US |
dc.identifier | RLE_PR_132_01_01s_07 | en_US |
dc.identifier.uri | http://hdl.handle.net/1721.1/57088 | |
dc.description | Contains an introduction and reports on experiments and device results. | en_US |
dc.description.sponsorship | Joint Services Electronics Program Contract DAAL03-89-C-0001 | en_US |
dc.description.sponsorship | Charles S. Draper Laboratory Contract DL-H-404180 | en_US |
dc.language.iso | en | en_US |
dc.publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) | en_US |
dc.relation.ispartof | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989 | en_US |
dc.relation.ispartof | Solid State Physics, Electronics and Optics | en_US |
dc.relation.ispartof | Materials and Fabrication | en_US |
dc.relation.ispartof | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
dc.relation.ispartofseries | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132 | en_US |
dc.rights | Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. | en_US |
dc.subject.other | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
dc.subject.other | Experiments | en_US |
dc.subject.other | Device Results | en_US |
dc.title | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
dc.type | Technical Report | en_US |