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dc.contributor.authordel Alamo, Jesús A.en_US
dc.contributor.authorSomerville, Mark H.en_US
dc.contributor.authorAdams, Tracy E.en_US
dc.contributor.authorReiner, James W.en_US
dc.contributor.authorWeinberg, Michael J.en_US
dc.date.accessioned2010-07-16T20:32:52Z
dc.date.available2010-07-16T20:32:52Z
dc.date.issued1994-01-01 to 1994-12-31en_US
dc.identifierRLE_PR_137_01_01s_02en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57286
dc.descriptionContains an introduction, reports on two research projects and a list of publications.en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-92-C-0001en_US
dc.description.sponsorshipJoint Services Electronics Program Grant DAAH04-95-1-0038en_US
dc.description.sponsorshipRaytheon Corporation Contract 90-58203en_US
dc.description.sponsorshipTexas Instruments Agreement dated 08/14/91en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofPhysics of InAIAs/InGaAs Heterostructure Field-Effect Transistorsen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherPhysics of InAIAs/InGaAs Heterostructure Field-Effect Transistorsen_US
dc.subject.otherIntegratable S-passivation Process for the InAIAs/InGaAs Systemen_US
dc.subject.otherS-passivated InAIAs/InGaAs MODFETsen_US
dc.titlePhysics of InAIAs/InGaAs Heterostructure Field-Effect Transistorsen_US
dc.typeTechnical Reporten_US


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