dc.contributor.author | del Alamo, Jesús A. | en_US |
dc.contributor.author | Somerville, Mark H. | en_US |
dc.contributor.author | Adams, Tracy E. | en_US |
dc.contributor.author | Reiner, James W. | en_US |
dc.contributor.author | Weinberg, Michael J. | en_US |
dc.date.accessioned | 2010-07-16T20:32:52Z | |
dc.date.available | 2010-07-16T20:32:52Z | |
dc.date.issued | 1994-01-01 to 1994-12-31 | en_US |
dc.identifier | RLE_PR_137_01_01s_02 | en_US |
dc.identifier.uri | http://hdl.handle.net/1721.1/57286 | |
dc.description | Contains an introduction, reports on two research projects and a list of publications. | en_US |
dc.description.sponsorship | Joint Services Electronics Program Contract DAAL03-92-C-0001 | en_US |
dc.description.sponsorship | Joint Services Electronics Program Grant DAAH04-95-1-0038 | en_US |
dc.description.sponsorship | Raytheon Corporation Contract 90-58203 | en_US |
dc.description.sponsorship | Texas Instruments Agreement dated 08/14/91 | en_US |
dc.language.iso | en | en_US |
dc.publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) | en_US |
dc.relation.ispartof | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994 | en_US |
dc.relation.ispartof | Solid State Physics, Electronics and Optics | en_US |
dc.relation.ispartof | Materials and Fabrication | en_US |
dc.relation.ispartof | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors | en_US |
dc.relation.ispartofseries | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137 | en_US |
dc.rights | Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. | en_US |
dc.subject.other | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors | en_US |
dc.subject.other | Integratable S-passivation Process for the InAIAs/InGaAs System | en_US |
dc.subject.other | S-passivated InAIAs/InGaAs MODFETs | en_US |
dc.title | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors | en_US |
dc.type | Technical Report | en_US |